Ordering number: EN 3261A
No.3261A
2SB1232/2SD1842
i
SAfiYO
2SB1232 : PNP Epitaxial Planar Silicon Transistor 2SD1842 : NPN Triple Diffused Planar Silicon Transistor
100V/40A Switching Applications
Features
• Large current capacity and wide ASO. ■ Low saturation voltage.
Applications
Absolute Maximum Ratings at'fa = 25°C | | | | unit | | Collector-to-Base Voltage | Vcbo | | | (-)no | V | | CoUeclor-lo-Emitter Voltage | Vceo | | | (-)100 | V | | Emitter-to-Base Voltage | Vebo | | | (-)6 | V | | Collector Current | ic | | | (-)40 | A | | Collector Current(Pulse) | jcp | | | (-)65 | A | | Base Current | Ib | | | (-H2 | A | | Collector Dissipation | Pc | | | 3.0 | W | | | | Tc = 25°C | | 150 | W | | Junction Temperature | Tj | | | 150 | °C | | Storage Temperature | Tstg | | | -55 to +150 | °c | | Electrical Characteristics at Та | = 25°C | | | min typ | max | unit | Collector Cutoff Current | *cbo | vcb=(-)ioov,ie = | 0 | ( | -)0.1 | mA | Emitter Cutoff Current | Iebo | VEB = (-)5V,IC = 0 | | ( | -)0.1 | mA | DC Current Gain | hPE(l) | Vce = (-)2V,Ic = (- | -)4A | 50* | 140* | | | hFE(2) | VCE = (-)2V,IC = (- | -)16A | 20 | | | C-E Saturation Voltage | vce(sat) | IC = (_)16A,IB = (- | )1.6A | ( | -)0.8 | V | B-E Saturation Voltage | vbe(sat) | 1с = (_)16АДв = (- | )1.6A | ( | -)1.5 | V | C-B Breakdown Voltage | V(br)cbo Ic = (-)lmA,IE = 0 | | (-)no | | V | C-E Breakdown Voltage | V(br)ceo Ic = (-)5mA,RBE = | CO | (-)ЮО | | V | E-B Breakdown Voltage | v(br)ebo | 1Е = (-)1тАДс = 0 | | <-)6 | | V |
|
Ж : For the hEE(i)of the 2SB1232/2SD1842, specify at least two ranks in principle. |
• Motor drivers, relay drivers, converters, and other general high-current switching applications ( ):2SB1232
50 P 100
70 Q 140
Package Dimensions 2022A (unit; mm) |
SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
71095TS/7190MH,TA(KOTO) No.3261-1/4
